Abstract:
Chilas develops off-the-shelf laser sources based on hybrid integration of Photonic Integrated Chips (PICs). Combining the high optical powers of semiconducting optical amplifiers (SOAs) with low-loss wavelength tunable mirror structures on Si3N4 PICs results in compact and robust tunable laser sources. These extended cavity diode lasers (ECDLs) exhibit unique characteristics like wide tuning ranges (>100 nm), ultra-narrow linewidths (<1 kHz) and high output powers. Here we present up to 162.5 mW of optical output power by combining two SOAs inside a single cavity, thereby scaling the output power without the need of additional optical amplification on the output port. The presented laser operates inside the telecom C-band, but the strategy can be tailored to other wavelengths like 850 nm, 780 nm and 690 nm, where Si3N4 plays a key role. This new generation of hybrid integrated ECDLs, exhibiting high optical output powers, wide wavelength tuning ranges and ultra narrow linewidths, opens up a wide range of applications.
Authors: Albert van Rees, Wilson Tsong, Ian van den Vlekkert, Fathema Farjana, Rob E. M. Lammerink, Ilka Visscher, Chris G. H. Roeloffzen, Sami Musa, Dimitri Geskusa
Publication location: Proceedings of SPIE OPTP.
Date of publication: 11 March 2024
D.O.I: https://doi.org/10.1117/12.3003689
How to cite this article: Albert van Rees, Wilson Tsong, Ian van den Vlekkert, Fathema Farjana, Rob E. M. Lammerink, Ilka Visscher, Chris G. H. Roeloffzen, Sami Musa, Dimitri Geskus, “High-power 150 mW extended cavity Si3N4 tunable narrow-linewidth laser,” Proc. SPIE 12892, Optical Interconnects XXIV, 128920J (11 March 2024); https://doi.org/10.1117/12.3003689
